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Reactor analysis of chemical vapor deposition of titanium dioxide and copper thin film

Posted on:1995-09-06Degree:Ph.DType:Dissertation
University:Louisiana State University and Agricultural & Mechanical CollegeCandidate:Lai, Wing-Cheong GilbertFull Text:PDF
GTID:1471390014492083Subject:Chemical Engineering
Abstract/Summary:
A set of reactor models for chemical vapor deposition (CVD) of titanium dioxide films from titanium tetraisopropoxide (TTIP) in a vertical cold-wall CVD reactor has been developed. The effects of the carrier gas on the deposition of TiO$sb2$ films were examined. The reaction mechanism proposed by the earlier workers in our group was used for the reactor modeling (Siefering and Griffin, 1990a; 1990b). The kinetic parameters were estimated from the reactor models at three levels of approximation; i.e., a lumped parameter (LP) model, a one-dimensional stagnation point flow reactor (1-D SPFR) model, and a full 2-D SPFR model. The 2-D SPFR modeling equations were solved using a control volume based finite difference method (SIMPLE). Based on the 2-D SPFR model, a more accurate activation energy for gas phase reaction was estimated to be 55 kJ/mole. I showed that 1-D SPFR model provided a good agreement with the 2-D SPFR model with our reactor geometry. The relationship between the carrier gas and pure TTIP experiments was explained by the collision theory.;Copper films with low resistivity have been deposited from copper(II) hexafluoroacetylacetonate (Cu(hfac)$sb2$) diluted by H$sb2$ in a horizontal warm-wall CVD reactor. The effects of substrate temperature and hydrogen pressure on the growth rate of Cu film were examined. A transport controlled engine was observed at substrate temperature of 350$spcirc$C and H$sb2$ pressures above 300 Torr. On the other hand, a reaction controlled regime was observed at the substrate temperature of 250$spcirc$C and low H$sb2$ pressure. A 2-D horizontal flow reactor model was developed to describe the temperature and concentration gradients. First, I calculated the surface concentration profiles by matching the measured growth rates with a power rate expression. Using the predicted surface concentration profiles, I proposed a non-competitive adsorption reaction mechanism to give a more physically realistic rate expression. Kinetic parameters were estimated based on both theory and measured results.
Keywords/Search Tags:Reactor, 2-D SPFR model, Titanium, Deposition, CVD, Copper
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