| Epitaxial lift-off (ELO), a technique of removing an epitaxially grown GaAs layer from its growth substrate by selective etching of an AlAs sacrificial layer, is described for field-effect transistor fabrication independent of the GaAs growth substrate. Metal Semiconductor Field-Effect Transistors (MESFETs) and High Electron Mobility Transistors (HEMTs) fabricated on silicon and sapphire substrates using ELO are investigated. A 0.1 ;A new technique for fabricating optoelectronic integrated circuit (OEIC) photoreceivers for 1.3-1.55 ;Results of investigation of a novel source of cadmium and zinc diffusion for shallow p... |
