| In view of the physical limit of the thickness of thin SiO;In this work, four magnetron sputtering approaches were used for the deposition of HFO;Parameters such as dielectric constant, capacitance density, mobile ion density, fixed surface charge and interface state density, dissipation factor, resistivity, charge storage capacity, dielectric strength, leakage current density were calculated or extracted and then assessed. Reliability issue like interface charge trapping was illustrated. Thickness, frequency, temperature effects on the dielectric constant and dielectric loss were also discussed.;In summary, the HfO... |
