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Structure Study of Magnetic Thin Films for Voltage Controlled Spintronics by Scanning Transmission Electron Microscopy Experiment and Density Functional Theory Calculation

Posted on:2019-09-12Degree:Ph.DType:Dissertation
University:The University of Wisconsin - MadisonCandidate:Sun, CongliFull Text:PDF
GTID:1471390017489458Subject:Materials science
Abstract/Summary:
We have studied magnetic thin films for voltage controlled magnetic tunnel junctions (MTJs) by advanced scanning transmission electron microscopy (STEM) and density functional theory (DFT) simulations. MTJs are the prototypical spintronic device and manipulation of magnetism by electrical means is among the most promising approaches to novel voltage-controlled spin electronics. The voltage controlled magnetic effect can be achieved across many different materials systems, all of which depend on high-quality thin films with minimum crystallographic defects.;Cr2O3 is antiferromagnetic in bulk but ferromagnetic on the (0001) surface. Bulk Cr2O3 has two degenerate antiferromagnetic states with opposite (0001) surface spin polarization. As Cr2O3 is also magnetoelectric, the degenerate antiferromagnetic states can be lifted by manipulating the free-energy gain DeltaF = aEH. Therefore, the surface ferromagnetism can be controlled by applied electric field. We have observed vertical grain boundaries in Cr2O 3/Al2O3 systems that are related with a 60° in-plane rotation by diffraction contrast TEM image. STEM as a function of scattering angle points out a simultaneous ⅓[101¯0] basal plane shift. Local boundary electron energy loss spectroscopy (EELS) shows a pre-peak on the O K-edge, indicating a reduced bandgap along the boundary that provides potential breakdown paths in Cr2O3 thin films.;B doping of Cr2O3 is known to increase the Neel temperature. B was found to form either BCr4 tetrahedra or BO 3 triangles in the Cr2O3 lattice, with sigma * and pi* bonds exhibiting different energy loss features. Modeling the experimental spectra as a linear combination of simulated B K edges reproduces the experimental pi* / sigma * ratios for 12 to 43 % of the B in the sample occupying BCr 4 sites. Simulated BCr4 fraction / total B as a function of oxygen partial pressures supports the EELS results and indicates further increase of Neel temperature can be achieved by optimizing oxygen partial pressures.
Keywords/Search Tags:Thin films, Voltage controlled, Magnetic, Electron
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