| The performance of InP solar cells has been limited by low open circuit voltages. While the reported short circuit current densities are approaching the theoretical limit, the open circuit voltages have yet to obtain what is expected from a semiconductor with a direct band gap of 1.35eV. This work investigates the factors that determine the open circuit voltage and presents the design and fabrication of a high open circuit voltage P/N InP solar cell.;After a first principles study was done to determine the optimal design for an InP solar cell, it was found that the optimum P/N solar cell was more efficient than the optimum N/P solar cell due to a much larger open circuit voltage. Since it is the open circuit voltage that is limiting the performance of present day InP solar cells, a detailed analysis was performed and a new device design was created to overcome the barriers that are limiting the open circuit voltage. It was found that to obtain a high open circuit voltage P/N InP solar cell, a thin, highly doped emitter layer with limited top contact area metallization was required. A novel device design was conceived which includes a two-step liquid phase epitaxial growth procedure and an internal oxide layer to isolate the p-n junction area and limit the amount of top contact area. This process leads to a "hidden contact" device which limits the effects of high J... |
