| Trivalent silicon centers, E;In the silicon dioxide system the focus has been on trivalent silicon E;In the silicon nitride system, the investigation was centered on another class of silicon dangling bonds, K centers. Using electron nuclear double resonance it was determined that the K center defect is a silicon atom bonded to nitrogens. This study has also revealed the presence of a new paramagnetic defect center in silicon nitride, a nitrogen dangling bond. Collectively, the silicon nitride results provide information regarding the unpaired electron's wave function on the silicon atom, on the nitrogens bonded to the silicon atom, and on a nitrogen atom.;These results may be of considerable importance, since these trivalent silicon centers dominate the electronic properties in the aforementioned amorphous insulators used extensively in silicon integrated circuit technology. |
