Study On Transparent Conductive Layer And Intrinsic Amorphous Silicon Layer In Amorphous Silicon Solar Cells

With the growing energy crisis and environmental problems, to find suitable new energy becomes the international research focus. Solar has become widely accepted as a clean renewable energy, and solar cell materials have also been adequately studied after years of development. Amorphous silicon thin film solar cells are more environmentally friendly than conventional silicon solar cells, will occupy an important position. This paper mainly studies of preparation and performance of the transparent conductive layer and the intrinsic amorphous silicon layer in amorphous silicon solar cells.In terms of transparent conductive layer, we prepared fluorine doped tin oxide (FTO) films by ultrasonic spray pyrolysis. Effects of the deposition conditions like solution composition, substrate temperature and spray time on optical and electrical properties of the films were studied, to obtain amorphous silicon films with high transmittance and low sheet resistance that meet the requirement for amorphous silicon solar cells. The results show that the suitable deposition condition would with substrate temperature of 450℃, spray time of 2 minutes, F-doping rate of 1.2, oxalic acid concentration of 12mmol/L. The optimal sample sheet resistance of 27Ω/□, transmittance of 76%.Intrinsic amorphous silicon layers were prepared using magnetron sputtering, the amorphous silicon thin films prepared by polycrystalline silicon target and monocrystalline silicon target were compared, their Hall mobility, optical band gap, X-ray diffraction (XRD), Raman spectroscopy were analyzed, the effects of sputtering power on them were studied. The deposition power is from 100 to 200W. Compared with the a-Si films deposited by using monocrystalline silicon target, the a-Si films prepared with polycrystalline silicon target exhibit better growth property, similar optical band gap, and own the highest mobility of 1.658cm2/Vs. The results indicated that the polycrystalline silicon target is superior to the monocrystalline silicon target when used to prepare a-Si films as the intrinsic layer in a-Si solar cells.