Developing Physics-based Models for 4H-SiC High Voltage Power Switches---MOSFET, IGBT and GTO

The goal of this dissertation is to develop physics-based equivalent circuit models for 15kV∼20kV 4H-SiC power switches. The previous modeling works will be reviewed, and the parameter extraction methodologies will be discussed.;MOSFET is modeled using a voltage-controlled current source for channel current and three nonlinear capacitances for the transient behavior. The high electron saturation velocity and its effect on the saturation current level will also be discussed. Final model has been implemented in Simulink/Matlab, and the execution time for the turn-on and off transient is less than 1 second.;IGBT Analytical model that translate the local excess carrier to the diffusion capacitance will be derived first and implemented in a sub-circuit manner into Simulink/Matlab. A novel parameter extraction technique---Excess carrier density mapping (ECDM)---using inductive switching waveforms is introduced. The execution time of the model is about 7 seconds and 2 seconds for a turn-off and turn-on transient, respectively. IGBTs with two-zone drift region for slowing down the turn-off dv/dt are also proposed based on the developed analytical model.;Finally, 4H-SiC p-GTO model based on the IGBT one is developed. Region-wise lifetimes throughout the drift region was observed when using the proposed ECDM technique. Simulated waveforms using region-wise lifetime have shown better fitting results than the case using constant lifetime. The difference between n-type and p-type ambipolar switches will be discussed and compared using the developed models.