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Magnetic And Electrical Properties Of The BiFeO3 Based Multiferroic Heterostructures

Posted on:2021-03-01Degree:DoctorType:Dissertation
Country:ChinaCandidate:W C ZhengFull Text:PDF
GTID:1481306548975619Subject:Materials Physics and Chemistry
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BiFeO3,which is one of the single phase multiferroics,has high ferroelectric Curie temperature,high Néel temperature and large remanent polarization.Thus,it has potential applications in the non-volatile memory devices.In this dissertation,BiFeO3 thin films and BiFeO3-based heterostructures were fabricated by magnetron sputtering.The microstructure,magnetic properties and electrical properties were investigated.In BiFeO3/LaAlO3 heterostructures,as the thickness of the BiFeO3 thin films increases,the BiFeO3 phase undergoes a series of phase transition processes that are the highly strained tetragonal-like BiFeO3 phase?tetragonal-like BiFeO3phase?tilted MC phase?intermediate monoclinic phase?rhombohedral bulk-like BiFeO3 phase.In the 17-nm-thick BiFeO3 thin film,the BiFeO3 phase is the highly strained tetragonal-like BiFeO3 phase.The net magnetic moment in the highly strained tetragonal-like BiFeO3 phase results from the spin canting,which is induced by the asymmetric Fe O5 pyramid.Thus,the net magnetic moment exists in the17-nm-thick BiFeO3 thin film.In Pt/Fe/BiFeO3/SrRuO3 heterostructures,the mechanisms of the resistive switching and capacitance switching behaviors were investigated.The resistive switching behavior comes from the ferroelectric polarization modulated depletion layer width around the BiFeO3/SrRuO3 interface.The conductivity mechanisms are the Fowler-Nordheim tunneling mechanism under the negative bias and the space-charge-limited-conduction mechanism under the positive bias.The capacitance switching behavior is attributed to the electric field modulated the ferroelectric domains(including number,domain wall and polarization direction),the depletion layer width and the rearrangement of the carrier density in the depletion layer.Under the positive bias,the capacitance of the Pt/Fe/BiFeO3/SrRuO3 heterostructures is in the low capacitance states.Under the negative bias,the capacitance of the Pt/Fe/BiFeO3/SrRuO3 heterostructures is in the high capacitance states.Moreover,when the light shines on the Pt/Fe/BiFeO3/SrRuO3 heterostructures with the low capacitance state,the capacitance evidently increases.When the light shines on the Pt/Fe/BiFeO3/SrRuO3 heterostructures with the high capacitance state,the capacitance evidently decreases.The photo-capacitance behavior is mainly related to the variation of the depletion layer width,induced by the ferroelectric polarization modulated accumulation of the photogenerated carriers around the BiFeO3/SrRuO3 interface.In addition,the influence of the uniaxial strain on the magnetic properties of the Fe3O4/muscovite and Fe3O4/BiFeO3/Pt heterostructures was investigated.When the uniaxial compressive strain is applied to the Fe3O4/muscovite heterostructures,the Verwey transition temperature increases and the saturation magnetization is enhanced.When the uniaxial tensile strain is applied to the Fe3O4/muscovite heterostructures,the Verwey transition temperature decreases and the saturation magnetization is enhanced.These phenomena result from the charge transfer between the Fe A3+and Fe B2+ions in the Fe3O4 thin films,induced by the uniaxial strain.Further,when the uniaxial strain is applied to the Fe3O4/BiFeO3/Pt heterostructures,the exchange bias field decreases.This phenomenon stems from the decrease of the interfacial superexchange interaction,induced by the variation of the Fe A-O-Fe BiFeO3 bond length and bond angle at the Fe3O4/BiFeO3 interface and the decrease of the Fe A3+ions at the Fe3O4 layer in bending states.
Keywords/Search Tags:BiFeO3, Magnetism, Resistive switching, Capacitance switching, Interfacial coupling
PDF Full Text Request
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