| The desire for next generation of high speed,high storage density,and low power consumption nonvolatile memory has stimulated and promoted extensive researches in new relevant functional materials.The kind of bismuth ferrite,BiFeO3?BFO?,as a single-phase multiferroic materials showing coupled antiferromagnetic and ferroelectricity at room temperature,has been widely researched due to the potential application value in spintronics devices and magnetic random access memory?MRAM?.In addition,recent years,the phenomenon of resistive switching has been found in BFO-based heterojunction devices.When an external voltage is applied,the device can be transformed in High resistance state?HRS?and the low resistance state?LRS?.Therefore,BFO also manifests potential applications in nonvolatile resistive memory.Here,we prepared Pt/BFO/SrRuO3/SrTiO3 resistive device by low deposition rate Radio frequency?RF?magnetron sputtering and lithography technology.The device was systematically characterized by X-ray diffraction?XRD?,atomic force microscopy?AFM?,piezoelectric response force microscopy?PFM?,scanning electron microscopy?SEM?and semiconductor characteristic measuring instrument.And we researched the influence of thickness of thin film,deposition temperatures and oxygen partial pressure on resistance performance and resistive switching mechanisms.The switching ratio of the device was found to reach 103,and it has excellent resistance retention and fatigue resistance with optimizing process parameters.The analysis of the BFO resistive device with different thicknesses of functional layer thin film shows that the device follows the space charge limiting current theory in the high resistance state and conforms to the conductive wire model in the low resistance state.And the resistive switching behaviors of Pt/BFO/SrRuO3/SrTiO3 devices sputtered at different deposition temperatures and oxygen partial pressure are mainly controlled by the internal defects of BFO thin film. |
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