The Study On Thermal Resistance Testing Technology For Novel Semiconductor Material Device And Thermal Boundary Resistance Measurement Methods For Heterogeneous Material

At present,new semiconductor material devices play an important role in aerospace,radar communication,new energy vehicles,and other fields.As the integration of electronic devices continues to improve,the power density gradually increases and the thermal environment becomes more complex,and their thermal reliability issues have become an important reason for limiting device performance.The temperature of the device during operation is an important factor affecting the reliability of electronic components and the whole system,and the device temperature rise and thermal resistance have become key indicators for evaluating the thermal performance of electronic devices.Meanwhile,with the rapid development of heterogeneous epitaxial materials and high thermal conductivity substrate bonding technology,the interface thermal resistance problem in the epitaxial layer of heterogeneous materials has also become one of the important factors that prevent the high thermal conductivity substrate from exerting its thermal performance.Therefore,the proper detection and evaluation of the thermal reliability of semiconductor devices has become one of the important issues that need to be solved for electronic device applications.In this thesis,the thermal characteristics of devices with new semiconductor materials and the measurement of interface thermal resistance in heterogeneous materials are investigated.The thermal resistance and the temperature distribution ofβ-Ga₂O₃ Schottky diodes and GaN HEMT devices at high drain-source voltage are studied by taking advantages of the electrical temperature-sensitive parameter method.Meanwhile,an integrated test chip with separated heat source-temperature measurement is proposed to realize the measurement of interfacial thermal resistance in heterogeneous materials based on the electrical method and structure function method.The interfacial thermal resistance of GaN on Siepitaxial materials is measured and it provides a novel method for the study of the thermal characteristics of new material semiconductor devices and the measurement of interfacial thermal resistance in heterogeneous materials.The thesis mainly accomplishes the following aspects.1.A technique to measure the junction temperature and thermal resistance ofβ-Ga₂O₃ Schottky diode was proposed using transient temperature rise detection method.In this study,the temperature-sensitive parameter ofβ-Ga₂O₃ Schottky diode is used as the forward junction voltage drop,and the thermal resistance test ofβ-Ga₂O₃ Schottky diode is realized by building a thermal resistance test system with the transient double interface method.In addition,the temperature distribution ofβ-Ga₂O₃ Schottky diode is studied with infrared thermal imaging camera and the results are compared with those of the electrical method to achieve a fast and non-destructive measuremen,which provides the guidance for the thermal management ofβ-Ga₂O₃ Schottky devices.2.To address the self-excitation problem of GaN HEMT devices in high drain-source voltage,a thermal resistance measurement method based on source-drain shorting technique is designed and the measurement under 48 V drain-source voltage is realized for the first time.To avoid the effect of self-excited oscillation on the thermal resistance measurement under high drain-source voltage,the corresponding test matching circuit is designed and the measurement method based on the source-drain shorting switch is proposed.The thermal resistance measurement of GaN HEMT devices under 48 V drain voltage is realized and the switching delay time in the measurement is less than 2μs.The thermal resistance characteristics of GaN HEMT devices under different operating voltages are measured by this measurement system.In addition,a dual-channel GaN HEMT device thermal resistance screening system has been designed and developed for the testing requirements of batch screening,and the fully automated testing in the product line has been realized by matching with the test sorter.At present,the equipment has been applied in the GaN HEMT production test line of a domestic device manufacturer,which realizes the localized replacement of the same type of test equipment in this field.3.To solve the technical problem that the traditional transient temperature rise detection technology cannot achieve the measurement of interface thermal resistance in heterogeneous materials,a measurement method based on the integration of heat source-temperature measurement separation test chip was proposed for the first time.In order to realize this measurement method,an integrated test chip with independent temperature sensor and microheater structure is designed and prepared,which can simultaneously operate as power heating and temperature signal acquisition,providing a new research technology for the measurement of interfacial thermal resistance in heterogeneous materials.4.With the integrated test chip,a method of interfacial thermal resistance measurement based on transient temperature rise detection technology and structure function method is proposed for the first time.For the characteristics of interfacial thermal resistance in heterogeneous materials,a test method of etching the sample surface to increase the percentage of interfacial thermal resistance is proposed,and a test system including a thermal resistance measuring instrument as well as a probe test platform is built for the measurement of interfacial thermal resistance.The GaN on Siepitaxial material was used as the sample under test,and the chip was used to measure this epitaxial sample and extract the interfacial thermal resistance between GaN and Simaterials.This measurement method expands the application of transient temperature rise detection technology and provides a simpler and easier-to-operate characterization method for the interface thermal resistance measurement problem compared to the traditional optical measurement method.In this study,the junction temperature and thermal resistance of new semiconductor devices and the interface thermal resistance of heterogeneous materials were investigated based on the development of electrical temperature-sensitive parameters.The applications of electrical methods in the testing of new semiconductor devices and heterogeneous materials were expanded to solve the problems of thermal resistance measurement of power devices and heterogeneous materials.The research results have formed industrialized test equipment and filled the gap in the field of related test equipment.The research results provide the theoretical and technical basis for the thermal design of devices and are of great significance for device reliability evaluation.