Studies On The Preparation And Optical Properties Of Ba(Zr_0.3Ti_0.7)O₃ Thin Films

There are many studies of Ba(ZrTi)O3(BZT) for DRAM application. Usually, ferroelectric thin films, for example, Ba1-xSrxTiO3(BST) thin film often has high current emission at low electric field . There have been some effects to replace the BST thin film with new films such as Ba(ZrTi)O3 (BZT). In case of BZT , it is obtained by substituting ions at the B site of the BaTiO3 with Zr in compounds of the perovskite structure ABO3. It is reported that an increase in the Zr content induces a reduction in the average grain size, decreases the dielectric constant, and maintains a leakage current low and stable. This is possible because the Zr4+ ion has lager ionic size than Ti4+. The BZT thin film has good properties in high frequency.The essential principle , technology process and advantages of the Ba(Zr0.3Ti0.7)O3 (BZT) ferroelectric thin films grown on Pt/Ti/SiO2/Si substrates and quartz substrates by sol-gel process are introduced. The heat-treatment technology was fixed according to the DSC-TG measurement , AFM(Atomic Force Microscope) and FE-SEM(Field Emission-Scanning Electrical Microscope ). BZT thin films show smooth surface morphology and well distributed thickness. XRD patterns showed that the simple perovskite phase was obtained after annealing at 550℃.Ba(ZrTi)O3(BZT) ferroelectric thin films grew on quartz substrates by a Sol-Gel process. The transmittance of the prepared BZT thin films were investigated U-3010 ultraviolet ray survey. Using"envelop method", we obtained the thick of BZT thin films about 301.3 nm and change of refractivity with the frequency of...