The Preparation And Application Of Antireflective AZO Thin Films

AZO thin films doped SiO₂ are prepared by co-sputtering on the quartz surface. The ratio was changed to be 1:1, 2:1 and 4:1 (AZO film thickness: SiO2 film thickness). At the same time, the deposition temperature was changed too. The results show that samples of 4:1 doping ratio achieve the largest grain size which is 36nm at 500℃. The lowest resistance which is 1.79×10-1Ωcm also appeared at 500℃with the 4:1 doping ratio. Samples mixed a certain proportion of SiO2 increases the optical transmittance to 87%-90%. Improving the deposition temperature or reducing the doping ratio of SiO2 could also decrease the band gap. Obviously, the AZO thin films doped with SiO₂ would reduce the AZO refractive index in the visible range. It is interesting that improving the deposition temperature could also reduce the AZO refractive index and achieve a very small resistivity.The affect of different annealing temperature and different aluminum depositing temperature on the crystallization process of amorphous silicon thin film is studied, when the quartz glass is applied as the substrate. Using the optical microscope and RAMAN, surface morphology, the structure of the silicon film after annealing are observed. The aluminum film surface structure and morphology at different depositing temperature are studied by scanning electron microscope (SEM). The results show that the amorphous silicon thin film will crystallize significantly after annealing at applicable temperature. Increasing aluminum depositing temperature may make amorphous silicon film crystallize easily annealed at 650℃.