| This paper recites the development and application of thin fill deposition by magnetron sputtering firstly,and introduces several typical sputtering method and their characters. Magnetron sputtering technology applied in thin fill deposition field is discussed.The utilization of Cu fill,as the target material,is introduced in microelectronics and solar cell field.A new type magnetron sputtering configuration is introduced in the paper.It is based on the design and advantages of conventional unbalanced magnetron sputtering configuration. Three assisted magnetic rings are setup around the vacuum chamber.They are used to improve the configuration of unbalanced magnetic field,confine the plasma in the chamber and optimize the characteristics of plasma.Finite Element Analysis software named ANSYS is used to simulate the magnetic field of conventional unbalanced magnetron sputtering and assisted magnetic confinement magnetron sputtering and plot the magnetic flux distribution of them.According to the non-uniform magnetic filed theory,the effects of assisted magnetic confinement and improvement of discharge characteristic are concluded.Langmuir probe,as a simple and ideal technology,is used to measure many plasma parameters including plasma spatial potential,electron temperature,electron density,ion density and so on.Compared with the datum of conventional unbalanced magnetron sputtering,assisted magnetic field can improve the plasma parameters and optimize their spatial distribution.The improvement of plasma characteristics can also be analyzed from the curve of plasma parameters following pressure.Emission spectrometric method is used to study ionization ratio qualitatively.The variation of ionization ratio can be reflected through the intensity ratio Ar~+/Ar of Ar~+ ion line (476.49nm) and Ar atom line(696.54nm) and the intensity ratio Cu~+/Cu of Cu~+ ion line (459.69nm) and Cu atom line(521.82nm).The result that the assisted magnetic field can enhance ionization ratio can be concluded.
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