| Polycrystalline silicon thin film has more superior and stable performance than traditional amorphous counterpart in the thin film transistor and the Solar cells field. Till now polycrystalline silicon thin films are mostly prepared by chemical vapour deposition based techniques, while ordinary magnetron sputtering technique with lower cost and safer maintenance is susally difficult to deposit crystalline silicon thin film. This difficulty of ordinary magnetron sputtering process could be alleviated by additional plasma assistance. We have prepared polycrystalline silicon thin film using inductive coupled plamas assisted intermediate frequency dc pulses magnetron sputtering under low temperature. This paper describes the preparation of polycrystalline silicon with plasma assisted magnetron sputtering technique. Various characterization techniques such as Raman, X-ray diffraction (XRD), Fourier Transform Infrared Spectroscopy (FT-IR) were employed to characterize deposited films... |