The Preparation Of The Nanoscale ZnO Film And The Study Of The Structure And Electrical Properties

Zinc oxide (ZnO) is a direct wide-bandgap compound semiconductor materials. ZnO doped by transition metal can significantly lower the resistivity, which can bring a wide practical application in semiconductor devices. Nanostructures of ZnO are the most abundant material nowadays. ZnO nanostructures have a very good value in the preparation of nano-structured nano-optoelectronic devices and nano-electronic devices.In this work, we sputter Fe-doped ZnO thin films on the n-Si (100) substrate with magnetron sputtering. We analyzed the influence of the sputtering time, barometric pressure and iron-doped concentration of ZnO thin films to nano-structured and electrical characteristic of the heterojunction. The work done and conclusions are as follows:(1) Prepared Fe-doped ZnO targets. We prepared five targets with 769YP-40C-based desktop powder preforming machine. The molar ratio of Zn and Fe elements are 1.00:0.00, 0.95:0.05, 0.90:0.10, 0.85:0.15 and 0.80:0.20.(2) We sputtered ZnO:Fe thin films on different sputtering conditions at intrinsic Si (100) with JGP560 type multi-purpose ultra-high vacuum magnetron sputtering system.(3) We measured and analyzed the thin films with Keithley 2400 Source Meter and XRD.(4) That the different sputtering time, different sputtering pressure and different concentrations of iron-doped has a not little influence to the ZnO/Si heterojunction. Iron-doped ZnO thin films prepared under different conditions are still hexagonal wurtzite structure, ZnO:Fe thin films obviously exist perpendicular to the substrate along the c-axis preferred orientation growth.