Growth Of NiO Films And Device By Magnetron Sputtering

NiO is a kind of transparent p-type wide band-gap semiconductor material. Itsband-gap energy ranges from3.6～4.0eV. Due to its better properties of chemicalstabilities, light and electricity, it has been widely used in kinds of fields such as gassensors, super condensers and light-emitting devices, etc.In this paper, high quality NiO thin films on Si, ITO and glass substrates havebeen obtained by Magnetron sputtering method. The films’ properties were studied bykinds of measurements. Especially we analyzed the effects of the sputtering power, theratio of oxygen and argon, substrate temperature on the films’ crystallization quality,surface condition and light-emitting quality. Finally we got the relatively optimizedgrowth condition to prepare the NiO thin films.Based on the prepared p-type NiO thin films, we fabricated the heterojunctionLED with UV emission properties on the n-type GaN substrate. Besides we preparedp-NiO/n-ZnO heterojunction light-emitting device on Si film surface. The two kinds ofstructural devices both showed well rectification property and achievedelectroluminescence at room temperature.