| The most attractive field in modern science is opto-electronic integration and photonic integration. The former processes light and electric current in one chip, while the latter makes studies on devices containing light emission, modulation, reception and procession to realize absolute optical communication. Photonic integration chips demonstrate efficiency and reliability for no transformation between light and electricity frequently. LiNbO3 possesses excellent electro-optical, non-linear optical, acousto-optical, photoelastic, photorefractive, pyroelectric and ferroelectric properties. After doped by some elements, it presents a variety of specific characters, widely used in surface acoustic wave filters, waveguides, electro-optic modulators, optical limited devices, frequency doubling switchers and nonvolatile holographic storage. So a lot of researches have been done on preparation of LiNbO3 films since 90's of the last century.In this thesis, the following researches were performed.(1) Ceramic LiNbO3 targets were successly fabricated from Lithium Carbonate (Li2CO3) and Niobium Pentaoxide (Nb2O5) powder. The effects of parameters such as sintering temperature, time and moulding pressure on the crystal size and porosity ratio were analyzed. For the LiNbO3 target moulded under 30MPa with the atom ratio 1.4 of Li and Nb, the optimal manufacturing condition is sintering temperature of 1100℃for two hours.After sintering ,the temperature cools down slowly to reduce thermal stress.When the pressure or the atom ratio of Li and Nb increased, the sintering temperature should decreased. If not, the thermal shock resistance of targets were hampered as a result of larger grain size and low porosity ratio.(2) LiNbO3 films were deposited on Si(100) and (111) substrates. Changes of film's microstucture with gas flow ratio (O2:Ar), substrate temperature, annealing temperature and total sputtering gas pressure were investigated. LiNb3O8 or NbO2 phase was reduced when the mass flow ratio of O2 and Ar increased and stoichiometric LiNbO3 film was got with the mass flow ratio of O2 and Ar being bigger than 6/5. When substrate temperature was in the range of 500 to 550℃, the preferred growth orientations of films were <012> and <104>, yet if the substrate temperature was 600℃, partially C-axis oriented film was revealed by XRD after annealed. The higher total pressure of the sputtering chamber, the smaller grains and worse crystallization.The optimal annealing temperature was between 700 and 900℃and there was no difference whether the films were annealed in vacuum or in nitrogen atmosphere. Films annealed in air caused great Li loss and displayed opaqueness.(3) The refractive index and photoluminenscence properties of LiNbO3 film under best depositon conditions were investigated. For the as-deposited LiNbO3 film, the refractive index and film thickness were 2.00 and 113nm. After the film was annealed at 900℃, the refractive index and film thickness were 2.25 and 100nm, respectively.The former was similar with the refractive index of LiNbO3 crystal for the extraordinary light and ordinary light, which is between 2.206 and 2.289. The latter indicated that the film was denser after annealed. The SiO2/Si film deposited with different O2 and Ar mass flow ratio showed poor photoluminescence properties. But when LiNbO3 layer was sandwiched, the fluorescence spectrum was greatly enhanced, and the spectrum was further enhanced after the film was annealed at 600℃than 400℃.
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