| Above all, this paper briefly introduces the development survey of silicon-based luminescence matter in recent years, then sums up some common phtoluminescence theory models. After comparing some common preparation methods, C(film)/Si(Si02)(nanometer particles)/C (film) (abbr. C/Si(Si02)IC) is fabricated by sputtering silicon on the amorphous carbon film in Ar gas firstly, then depositing amorphous carbon film on silicon particles layer in vacuum. Finally, it is annealed at different temperatures (27?50). The configuration of sample is studied by transmission electron microscopy (TEM) and scanning electron microscopy (SEM); the matter phase is analyzed by X-ray diffraction (XRD); the element valence is tested by photoelectron spectroscopy (XPS); the photoluminescence (PL) and Raman spectrum are tested by fluorescence spectrophotometer and laser Raman spectrograph (LRS)respectively. Lastly, the photoluminescence mechanism is preliminarily discussed. The achievements of experiments are listed as follow: The sample has special ulti-layer sandwich structure s film/ particles/film is successfully fabricated by direct current (D.C.) glow sputtering in Ar gas and depositing in vacuum. At the aspect of configuration, we find: (1) Si(Si02) nanometer particles are spherical on the whole, whose diameter is about 30 nm. The thickness of the sample is about 5Oprn totally. (2) Hole structure is found on the surface of sample after heated at 400~扖. The particles on the surface are well-distributed and compacted after heated at 650扖. (3) Because of oxidation, Si02 surrounds Si particles during sputtering. Caused by the oxidation and carbon atoms?reduction during heating , the ratio of Si02/Si alternately changes with the increase of annealing temperature: the reduction occupies dominant position at 400扖, Si02 is reduced to Si by C, so the rate of Si02/Si is lowest; the oxidation occupies dominant position at 650, Si is oxidized to Si02, so the rate of Si02/Si is highest. (4) Carbon atoms diffuse into Si(Si02) particles layer during heating and produce SiC by reacting with Si at 650. At the aspect of photoluminescence, the achievements are listed as follows: (1) Excited by 250nm UV- light, the sample gives a strong PL1 band around 398nm (3.12eV), another weak PL2 band around 360nm(3.44eV) is only found after annealing at 650. (2) The shape and peak position of PL is independent on annealing temperature ,but the intensity is strongly dependent on it: the intensity decrease below 400C, and is lowest at 4000C; it increase between 400-650, and decrease again beyond 650. (3) The intensity of PL decreases with the increase of excited wavelength. At the aspect of photoluminescence mechanism, the achievements are listed as follows: (1) The excitation of photons of PL1 band occurs inside Si02 nanometer particles, but the emission of photons comes from the defects at the interface between Si02 and Si. The intensity of PL1 band is directly proportional to the ratio of SiO]Si. (2) PL2 band is due to electron-hole recombination inside SiC nanometer particles. Passing through this paper study, the conclusion is: Fabricating C/Si (Si02)/C by D.C. glow sputtering in Ar gas and depositing in vacuum is permitted. The ulti-layer sandwich structure?contributes to the violet-light poto-... |
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