Study On VOx Films Prepared By Magnetron Sputtering

The vanadium-oxygen (VOx) is a rich and widely studied because it exhibit a number of different stoichiometric compositions. VOx has attracted more and more interesting, due to its good characteristics of electric/optic transition and thermal-sensitivity. Currently, the research of Vanadium-oxygen is focused on optoelectronic devices including optical data storage, sensitive electric/optic switches materials, solar power cell, laser protective films, and so on.In this paper, VOx films fabricated by DC/RF magnetron sputtering using a highly pure vanadium metal target(99.99%) was reported.Through the design of orthogonal experiment, the influence on the was coefficient of resistance (TCR) and deposition ration of Ar/O2, sputtering power, gas pressure, and substrate temperature was analysed. According to the research of experiments, the optimized preparation parameters were obtained. The rate of argon-oxygen is 100:4, the power is 120W, the substrate temperature is 300℃, and the working pressure is 2Pa. The result shows that VOx films prepared by this method have relatively high TCR. It was confirmed by x-ray photoelectron spectroscopy analysis of the vanadium and oxygen bands. V2P3/2 peak shift was used for identify the phase change of vanadium oxide.The VOx films are annealed to study the annealing temperature and annealing time using the RTP-500 in order to obtained relatively high TCR. According to the research of experiments, annealing temperature and annealing time have an important impact on the TCR. The curve showing the relationship of TCR between annealing temperature and annealing time is obtained. The results show that, TCR of optimized VOx films ranges from -2%/K to -3.6%/K.