Research On Radiation Damage Evaluation Method Of Pn Junction Material Based On Noise

pn junction is the core structure of the semiconductor devices,these devices arewidely used in the aerospace application. These devices are easy to produce radiationdamage in space radiation environment,and resulting in degradation of deviceperformance, so the anti-radiation screening and reliability assessment are essentiallinks. The base of assessment and screen of these devices is radiation damage evaluationin pn junction material.The root cause of the radiation damage in pn junction device is the defect inducedby radiation and the radiation-induced charge capture by original defect in pn junctionmaterial. These damages of pn junction material affect the device performance. Thedamage of the pn junction material is closely related to its noise level, and the change ofthe noise parameters far exceeds the change of the electrical parameters. Therefore, thestudy of the noise in pn junction devices can provide a sensitive, high reliabilityevaluation technique for pn junction materials and device. In this thesis, the major workdone and main conclusions are:1. Based on the summarizing the mechanisms of radiation damage in pn junctionmaterial, research the relationship between radiation damage in pn junction material andthe degradation of device performance ,and the relationship between radiation damagein pn junction material and the change of noise parameters. Bose the degradation ofdevice performance and the change of noise parameters are induced by radiationdisplacement damage and ionizing damage. It provides the theoretical basis of the noiseused to evaluate the radiation damage in pn junction material.2. Designe and complete the radiation experiments of the pn junction materialsamples, optimize the noise evaluation parameters and electrical evaluation parametersusing the experimental results comparing method, and illuminate the advantage of thenoise parameters using to evaluation the radiation damage in the pn junction material.3. Through the analysis of 1/f noise model, we find that it can characterize thedefects induced by radiation damage in pn junction material. Based on this theoreticalbasis, the ionizing damage evaluation model and displacement evaluation model havebeen established, and then verified by experiment. Established a complete set of the pnjunction material radiation damage evaluation techniques based on noise, includingevaluation model, evaluation criteria and evaluation procedures.