Study On Optical And Electrical Properties And Reparation Of Vo2 Nanometer Powder And Doped Film

Using V2O5 powder as starting material, VO2 nanometer powder was prepared by liquid phase-hydrolysis method and a sol-gel vacuum evaporation and deoxidize deposition method, and using V2O5 powder as starting material and MoO3 powder as adulterant, the Mo6+ doped VO2 phase-transition thin film was prepared by the inorganic sol-gel method. The preparation process and the interrelated physical properties of VO2 nanometer powder and the doped film were tested and analyzed by means of XPS, XRD, TGA, DSC, TEM, SEM and the IR absorption spectra.The investigation of milling showed that the grain size of VO2 nanometer powder prepared by liquid phase-hydrolysis method increased in the crystallization process, the powder achieved completely crystallization under 400癈 vacuum heat treatment for lOh of which the grain size was intervenient 10~20nm. the grain size of VO2 powder prepared by a sol-gel vacuum evaporation and deoxidize deposition method was intervenient 70~90nm, but the single granule connect each other, and take the shape as the congregated crystal or the connection. The analyses of the IR absorption spectra showed that VO2 nanometer powder has remarkable the abrupt change of infrared light transmittance, and the abrupt change quantity of infrared light transmittance increase with diminish of the granularity.The study of the Mo6+ doped VO2 film prepared by the inorganic sol-gel methodshowed that the main component of the prepared doped film is VC>2, the structure of the doped MoOa in the prepared doped thin film don't change, and temperature of the abrupt electrical resistance change of the prepared doped film was obviously decreased with the increase of MoO3 doped content, but magnitude of the abrupt electrical resistance change and the abrupt change quantity of infrared light transmittance were also decreased, of which the abrupt electrical resistance change was more distinct. But so far as the doped quantity of MoOs less than 5%, the abrupt electrical resistance change of the doped film still can reach 2 orders of magnitude, and commonly can't affect its application, so it is hopeful that temperature of the abrupt electrical resistance change can be reduced to room temperature scope.