The Preparation Of Vanadium Dioxide Powder And Films

Using V₂O₅ powder as raw materials , non-doped and doped VO₂ powder can be prepared by the chemical liquid precipitation and the vacuum heat treatment ,then use the prepared VO₂ powder as raw materials, we prepared VO₂ thin films through the magnetron sputtering and vacuum annealing process. using XRD, TEM, DSC and the temperature - resistivity testing means to study the Preparation Process and related physical properties of non-doped and tungsten doped VO₂ powder. XRD and temperature - resistivity tests to study the Preparation of VO₂ films.It can be found that through the study of non-doped powder prepared: VO₂ powder can be prepared by chemical liquid precipitation coupled with the vacuum heat treatment. it's phase transition temperature is 68.2℃, it's resistance properties change rate of 4 orders of magnitude before and after the phase transition temperature .It can be found that through the study of the tungsten doped powder: doped VO₂ powder can be prepared by chemical liquid precipitation with vacuum heat treatment method . when W/V is 6%, the temperature reduced is 31.3℃, phase transition temperature has been gradually declining with the increase of W amount, but its orders of magnitude of resistance change also decreased.It can be found that through the study of Preparation of the VO₂ films by VO₂ target, the better and higher purity VO₂ films can be prepared through magnetron sputtering and heat treatment process. using orthogonal test methods to study processing parameters of VO₂ films , it can be drawn that film quality is the main decision factor, the impact of annealing time followed and sputtering power and pressure have less affect by analysis of the resistance change rate. Then it can be chieved that the better process parameters for VO₂ film Preparation: sputtering power is 70 W, work pressure is 2 Pa, heat treatment temperature is 430℃, annealing for 1 h. it's resistance properties change rate of 2 orders of magnitude before and after the phase transition temperature.