Study On Numerical Simulation Of Temperature Field And Experiment In Multi-heat Source Synthesis Silicon Carbide Furnace

The temperature distribution, heat-transfer and temperature gradient change have vital influence on yield, quality and energy-cost of SiC product in multi-heat sources synthesis SiC furnaces. Therefore the study on regulation of temperature field and effect of the process condition on temperature field and measure that improving temperature area of silicon carbide synthesis has a great importance to enhance yield and improve quality, decrease energy-cost and safely produce.The temperature fields of traditional single-heat source furnace (Acheson furnace) and multi-heat sources synthesis furnaces invented by our group are analyzed by heat transfer method. The initial and boundary conditions are confirmed, through simplification, hypothesis and assumption of single-heat source and multi-heat sources furnace. And the mathematics models of temperature field are formed in single-heat source and multi-heat sources synthesis furnaces. The geometry models and numerical calculation models of temperature field in single-heat and multi-heat sources furnaces are established through finite element method. The consistency between confirmed mathematics models and mathematics base of ANSYS software is analyzed. It is showed that the study on numerical simulation of temperature field in multi-heat source is feasible with ANSYS software.The heat-performance parameters are determined through table and interrelated operation. The change rules of temperature field and reaction area with time and power are studied in single-heat source by simulation and experiment.The difference of simulation results of temperature distribution, heat flux and temperature gradient in various type furnaces is discussed. It is showed that the inner reasons for energy saving, quality improving, high-yield in multi-heat source furnace arethe functions of heat shield among cores, superposition and heat preservation of temperature fields each other. The simulation results are tested with multi-heat sources technical experiments.The changing rules of temperature distribution, heat-transfer and temperature gradient are simulated also in multi-heat sources furnace when the power is various. The study results show that the power has important effect on temperature field, heat-transfer and temperature gradient. And the optimum power of simulating furnace is ascertained. The experiment results are in accord with simulation results.Subsequently, the changing tends of temperature field are analyzed at different time in multi-heat sources furnace temperature. The study shows that the time has influence on temperature distribution and area of synthesis silicon carbide.And then the evolvement regulations of temperature distribution, heat flux and temperature gradient in furnaces are researched when the heat source number increases infinitely. The result demonstrates that the area temperature, heat flux and temperature gradient among heat sources become uniform and consistent with heat source number increasing. When the heat sources are unnumbered, the temperature among heat sources become coincident and the heat flux value and gradient value are almost naught. The temperature field among heat sources is even and consistent. Based on the study the new synthesized method of silicon carbide is put forward, named non-core furnace method that conductor is added to raw material to synthesis SiC.Finally, the feasibility of non-core furnace method for synthesis silicon carbide is tested by experiment in paper. The influences of raw material batch, power and time on silicon carbide are studied. The microcosmic form and performance of silicon carbide are analyzed through XRD and SEM analysis instrument. The potential application range is pointed out.