Doping Characteristics Of Shallow Electron Traps In Silver Halide Microcrystals

On the basis of photoelectronic dynamics, an energy model at room temperature that describes the cubic silver halide microcrystals not doped or doped with metal ion complex at deferent doping amounts is proposed, and then a series of differential equations describing the relationship between carriers number are set up. Characteristic curves of the photogenerated charge carriers in emulsions exposed to supershort laser are obtained by calculating the differential equations, and the free photoelectrons decay time is deduced. By analyzing the simulating results, the dependence of free photoelectron decay time on simulating parameters is gotten, which is the basis to decide the parameters for practical emulsions. On this condition, based on the experimental results gotten by the microwave absorption dielectric-spectrum measure technique, the photographic process at room temperature in AgCl cubic microcrystals doped with K4Fe(CN)6 is simulated. Through the optimization of simulating parameters, not only the cross-section and trap depth of the shallow electron trap induced by the dopant, but also the optimal doping amount is obtained.