| SiOxNy and SiNx thin films have deserved great attention due to their technological importance for application in microelectronics, as well as in optics and mechanics. Therefore, it is important to study the properties of their light emission.Two series of thin films of SiOxNy and SiNx were made at room temperature using a dual ion beam co-sputtering system. Some films were annealed in N2 ambience for an hour at different temperatures. The photoluminescence (PL) properties of two kinds of films were studied, while the microstructure of films was characterized by XRD, XPS, FTIR and so on.In SiOxNy films, an intense single PL peak at 600nm (2.06eV) was observed under ultraviolet excitation (Ex=225nm). There are three PL peaks at 470nm (2.6eV), 520nm (2.4eV) and 620nm (2.0eV) for SiNx films.With the aid of PLE spectra and the dependence of PL on the annealing temperature, the possible mechanism of light emission has been discussed. It is proposed to originate from N-related defects in the films. Furthermore, we discussed the possible origins of the emission peaks in SiNx thin films using the model of the energy gap state.
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