Researches Of The Relationship Of The Growth Of SiO₂ Nanowires And Difference Conditions Of Si Sources And Annealing Condition

Since July 1990, the official put the nanometer material science as material science a newbranch since uncovered, nanometer material caused the countries all over the world the physicalworld and materials of great interest and attention, and quickly formed a worldwide "nano hot".Nano SiO₂is the new one dimensional nano materials, its body diameter line in general about10 nm. Excellent size effect, quantum size effect, surface effect, macroscopic quantum tunneleffect and its special light, the electrical characteristics, high magnetic resistance phenomenon,nonlinear phenomena, and high temperature resistance still has high strength, stability singularfeatures to make it not only has the nature of ordinary silicon dioxide, but also have thenanoparticles has special nature, in rubber, plastic, fiber, coating, photochemical and biomedicalareas such as has a broad prospect of application. At present, SiO₂composite material hascaused the United States, Britain, Germany and Japan and other developed countries’ attention,and its development in the important position, makes the corresponding development plan,make nano SiO₂composite materials in the nanocomposites are the hotspot.This article is divided into two parts, the first part is preparation of SiO₂nanowires underdifferent experimental conditions, including different Si sources （Si powder, SiO powder） andthe growth of the conditions （annealing time, temperature and substrate）. Trials are divided intotwo kinds of modes, and sputtering group and the unsputtering group. Through the experimentsabove, found the feasibility scheme of preparation of SiO₂nanowires. The second part, is in theimprovements of the feasibility of the scheme. Experiment mainly divided into two parts:magnetron sputtering process and the annealing process. To the experimental of the unsputteringgroup, cleaned substrate were directly into the annealing process. After experiments, tests of themorphology, photoluminescence and components were done. As follows:1. Research different source of SiO₂Si nanowires growth situation. Experimental study is sputtering group, sputtering time Au 6 s, thickness of about 18 nm. Annealing temperature of1100℃, annealing time is 60 min. Annealing process is to join SiO powder and Si powder. Andthen by scanning electron microscope to detest the morphology of the two cases.2. Under the condition of different annealing SiO₂nanowires growth, including annealingtime, temperature and substrate. The first study is sputtering group, annealing temperature 950℃respectively, 1000℃, 1050℃and 1100℃; Annealing time for 60 min respectively, 80 min,100 min and 120 min; For the sputtering group, substrate were Si （111） wool piece and polishedpiece, annealing process to join Si powder, annealing time 100 min, annealing temperature are1100℃.3. Do further improvements on the basis of preparation feasibility scheme of SiO₂nanowires. The experiments are from sputtering group. Firstly, different times of sputtering Au ,respectively for 6 s and 12 s, joined the mixture powder of Si powder and carbon powder,annealing at 1100℃for 80 min, obtained long straight nanowires of different sizes. Secondly,studying the growth of SiO₂nanowires at the situations that joining carbon powder or notSputtered Au for 12 s, annealing process powder were respectively for Si powder and themixture powder of Si powder and carbon powder, annealing at 1100℃for 90 min, obtainednanoflower and nanolantern structures. Thirdly, studying the growth of SiO₂nanowiresdifferent annealing time, respectively for 90 min and 100 min. Sputtering Au time 12 s,temperature of 1100℃, obtained different morphologies of nanolantern structures.4. After experiments, the samples were carried on scanning electron microscopy （SEM）,Fourier infrared （FTIR） and X-ray diffraction （XRD） and X-ray photoelectron spectroscopy（XPS） and Photoluminescence （PL） analysis. Given new types of long straight, flourish andlanterns of nanowires structure, and has good luminous characteristics.