| In this paper, formation of the β-FeSi2 films and interdiffusion of the Fe/Si multilayers were investigated by employing X-ray diffraction, atom force microscopy and high-resolution transmission electron microscopy. The optimal experimental parameter of β-FeSi2 films by reactive deposition epitaxy was at 973 K. It was proved that β-FeSi2 film was successfully grown on Si substrate and the interface between film and substrate was sharp. The monophase β-FeSi2 films with the thickness of 360 nm and 850 nm were also successfully obtained by post-annealing 4-period and 10-period [20 nmFe/64 nmSi] multilayers at 973 K for 60 mins. The structural properties and interdiffusion of Fe/Si multilayers were investigated by means of in situ X-ray diffraction. The diffusivities have an Arrhenius-type temperature dependence and can be described as: DL(T )= 4.53×10-22 exp(-0.16eV/KBT) [m2/s] (573 K623 K)The low values obtained for the interdiffusion activation enthalpies may result from internal "short-circuit" low resistance diffusion paths, such as dense interface, in the multilayers. The influence of proton and electron irradiation on the interdiffusion of the Fe/Si multilayers was investigated. The atomic movement, rearrangement caused by the irradiation resulted in the structural relaxation and the crystallization of the multilayers, which is the reason of the promotion of the interdiffusion in the multilayers.
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