Preparation,Irradiation Modification And Energy Storage Properties Of Lead Zirconate Titanate Thiin Films

Currently,ferroelectric materials have attracted widespread attention in energy storage.Compared with bulk ferroelectric materials,ferroelectric thin films have higher breakdown field strength and can obtain better energy storage effect than bulk ferroelectric materials.Among them,lead zirconate titanate(PbZr_xTi_1-xO₃)thin films have better energy storage performance.The commonly used methods to improve the energy storage effect of ferroelectric thin films mainly include chemical doping,heterojunction structure design,etc.,but these methods are affected by uncontrollable factors such as solid solubility,diffusion coefficient,etc.,so that it is difficult to obtain ferroelectric materials with excellent energy storage.The macroscopic properties of the materials can be controlled by the regulation of the energy and injection amount of the irradiated particles.In this paper,electron and proton irradiation parameters with different energy and injection amounts were selected to improve the energy storage performance of(PbZr_xTi_1-xO₃)thin films,so as to achieve the purpose of improving the energy storage performance,and provide a new idea for the design of the energy storage performance of ferroelectric thin films.Firstly,360nm thick lead zirconate titanate films were prepared by sol-gel method,and the effects of different zirconate and titanium ratio composition and annealing temperature on the energy storage properties of lead zirconate titanate films were studied.The results show that the energy storage performance is the best when the annealing temperature is 650?,and the dielectric loss is small.Under the same annealing temperature of 650?and different Zr/Ti ratio,the energy storage performance is the best when Zr:Ti=50:50,and the dielectric constant is the largest.Therefore,the annealing temperature of 650?,Zr:Ti=50:50(PbZr_0.5Ti_0.5O₃)lead zirconate titanate film material has the highest energy storage density and energy storage efficiency,and the highest dielectric constant,dielectric loss is small.Based on the above results,PbZr_0.5Ti_0.5O₃ films prepared at 650?were selected as the research object to study the effects of different energy and electron irradiation amounts on the energy storage and dielectric properties of PbZr_0.5Ti_0.5O₃films.The results show that when the electron irradiation energy is 50 keV,the energy storage density,energy storage efficiency and dielectric constant first increase and then decrease with the increase of electron injection amount,and the dielectric loss at low frequency decreases with the increase of electron injection amount.When the energy is 130 keV,and the energy storage density and energy storage efficiency first increase,then decrease and then increase with the increase of injection amount.The dielectric constant first increases and then decreases with the increase of injection amount,and the dielectric loss also decreases to some extent.Correspondently,under proton irradiation of 50 keV,the energy storage density and energy storage efficiency of PbZr_0.5Ti_0.5O₃ film first increased and then decreased with the increase of injection amount,while the dielectric constant and dielectric loss decreased with the increase of injection amount.At the same injection amount of 1E14 cm^-2,the energy storage density increases with the increase of energy after proton irradiation,while the energy storage efficiency increases first and then decreases.After proton irradiation,the dielectric constant and dielectric loss decrease with the increase of injection amount.Irradiation introduces oxygen vacancies in PZT films,and the formation of vacancies and interstitial ions related to Pb and Ti ions is closely related to the decline of energy storage performance.