Praparation Of TaO_X Ion Conductor Films And Study On Doping Properties

Fast ion conductors(sometimes are named solid electrolyte) are a kind of solid material which ion conductivity can near or exceed liquid electrolyte. This material is required to have very low electron, besides high ion conductivity. Also it will have high permeation rate, be easy forming films and have good machine stability. What's more it must have high ion transplant rate.According datum, TaOX films have especial samdwich besides above traits. Among many ion conductor materials, TaOX is regarded as one of the most potential materials because of its good self-resume capability, short transmission response time, long cycle life and lower cost. It is a pity that they are far from practical use, and it is important work that the material is put into practice. There are some ways to improve the films'ion conductor performances, for instance, optimizing process parameters and doping method are two effective ways.Usually, there are several preparation processes for ion conductor films such as sol-gel, vacuum-evaporation, chemical vapor deposition and sputtering deposition, in which the magnetron sputtering is the most optimal preparation process, for its merits of quick deposition velocity, low substrate temperature, good uniformity and adhesion, as well as controllable process parameters. However, there are relatively few reports on preparing TaOX films by magnetron sputtering.With pure tantalum and zirconium targets, TaO_x and TaO_x:Zr films were deposited on WO3/ITO glass substrates by reactive magnetron sputtering and they were analyzed using spectrophotometer, V/A curve means, XRD and STM. The effect of the process parameters on the ion conductor performances and the structure of TaO_x films were discussed. The effect of the Zr-doping on the ion conductor performances and structure were studied.The research results show that the TaO_x and TaO_x:Zr films deposited by the reactive magnetron sputtering were amorphous; in ion conductor reaction they behaved good ion conductor performances. Moderate oxygen content enabled the films to have better ion conductor properties. It is helpful to improve the films'ion conductor properties with lower sputtering power and temperature in a range. The amorphism of Zr-doping TaO_x films, which have better ion conductor properties, tends to be stronger. It is rather complex to the effect of Zr-doping on ion conductor of TaO_x films, which is...