Study On Preparation And Properties Of PZT Films By Sol-electrophoretic Deposition

With the development of information and control technology, the characteristic of miniaturization and integration of devices demands new materials. The PZT flim has become a new hot issue of functional materials and devices in the world due to its excellent performance of ferroelectric, dielectric, piezoelectricity, photovoltaic and the characteristic of integration with semiconductor process. And the characteristic of PZT film-high sensitive and high output strain make it a most promising material of drive devices in MEMS.There are many methods to prepare PZT films. This essay discussed use Sol-electrophoretic deposition method to prepare PZT films. Pb(CH₃COO)₂ ZrO(NO₃)₂ å’Œ Ti(OC₄H₉)₄ were decided as the reactants, CH₃OCH₂CH₂OH as the solvent and the molar ratio of Pb:Zr:Ti wasl.05:0.52:0.48. The proper concentration of the sol was 0.2M and ratio of distilled water was 11.67vol%.The content of PZT powder affects the stability of PZT colloids. The concentration of colloids was 13.4 g of PZT powder per 100 g of PZT sol. The experiments showed that pH value about 3⁴ provideed good colloid stability.This essay also discussed the voltage and time of the electrophoresis. The results dedicated that the voltage should be about 1V in order to get pure PZT films with the perovskite structure. The thickness of PZT film increased linearly along with the increasing of the electrophoretic time.The structure characteristics and properties of the PZT films heat-treated at different temperatures from 500-600℃ were investigated. The PZT film heat-treated at 600℃ had good dielectric and ferroelectric properties with the dielectric constant of 781 at 1kHz, dielectric loss is 0.8%, the remnant polarization(P_r) of 24.6μC/cm2 and coercive field(E_c) of 61.9 kV/cm.