The Research On Preparation And Photoluminescence Of Porous Silicon Fabricated By Non-acid Hydrothermal Method

Porous silicon has received a great deal of emphasis on its attractive property in photoluminescence and electroluminescence at room temperature as it is possible for porous silicon to be compatible with silicon based technology, which could highly improve the integrated level of grand scale integration and expand the application of silicon technology from microelectronics to optoelectronics.Porous silicons, obtained by methods using hydrofluoric acid, hydrogen acid and other acids as well under the condition of illumination or electrolysis, have rough surface and low photoluminescence rate which greatly restrict the use of porous silicons in different areas. Due to the aboved reasons, We have tried a new method-non-acid hydrothermal method by using reaction kettle and also researched the photoluminescence property among specimens.Silicon monoxide can easily decompose in appropriate hydrothermal system as chemical bonds between molecules are at metastable state when in high temperature and pressure. Oxygen atom, one component of the outcomes, can react with the silicon in the surface of the silicon dice. Previous experiments show that no-acid hydrothermal method can be utilized to fabricate porous silicon with regular shape of pores and high PL efficiency by using silicon monoxide as the main input material. Because of the incessant agitation and the uniform temperature distribution, the pores were spread homogeneously on porous silicons.This paper has focused on the influences caused by various parameters in different reaction circumstances so that the optimal reaction condition could be found. We have also studied the surface topography, structure and photoluminescence of porous silicons produced by no-acid hydrothermal method through SEM, Raman and PL spectrum. We were informed by the results that the topography and photoluminescence of porous silicons produced by no-acid hydrothermal method were better than those fabricated by normal anodization and in order to gain porous silicon with high PL efficiency at certain peaks, we should choose right reaction temperature,...