Fabrication Of ZnO Films By Electrodeposition And Its Properties Research

Zinc oxide (ZnO) is a semiconductor oxide material with hexagonal wurtzite structure, it has excellent optical and electrical properties. It has wide range applications, such as transparent conductive thin films, surface acoustic wave devices, and UV detectors, etc. besides that, ZnO thin films are buffer layer material for GaN. ZnO is a semiconductor material with wide bandgap of 3.37eV at room temperature and high exciton binding energy (60meV) which is much higher than that of ZnSe (20meV) and GaN (21rneV). Besides, ZnO thin films can be prepared at temperature lower than 600℃, its growth temperature is lower than GaN, SiC and otherⅡ-Ⅳsemiconductor materials. Owing to these properties, ZnO can be used as room temperature short wavelength ophotoelectron material.Therefore, ZnO is considered as one of the most promising candidates for short wavelength optoelectronics devices, and it is very important to conduct further studies of the photoluminescence properties of ZnO thin films.ZnO films have been deposited by using several growth techniques, such as molecular beam epitaxy (MBE), pulse laser deposition (PLD), magnetron sputtering and electrochemical deposition. Compared with other techniques, electrochemical deposition is a simple and convenient method, has been extensively used in the synthesis of many different types of materials. It has several advantages such as low processing temperature, higher deposition rates, low cost and environment friendly, so it has a widely application foreground.