Study Of Quantitative Analysis Of Vanadium In SiC By Secondary Ion Mass Spectroscopy

The concentration of the vanadium SiC was measured quantitatively by SIMS in two types SiC sample: ion-implanted SiC and V-doped SiC by PVT. Based on the relative sensitivity factor (RSF) the depth profile of vanadium was determined. During the depth profile analyses with SIMS, beam intensity, bombardment time, secondary ion species, collected area, energy range of the secondary ions and mass resolution are studied in the experiments. After measurements of the samples, the experimental data are analyzed and examined. The ion-implanted SiC samples were considered as reference samples. Depth profiles of the vanadium in SiC were analyzed by SIMS and the TRIM computer simulation for comparisonThe experimental results suggest that the detection limit in ion-implanted SiC was 5×10¹⁴cm^-3 and V-doped SiC by PVT was 1×10¹⁴cm^-3. The difference between depth profiling with SIMS and the TRIM was not very large. But the testing constant conditions should be selected appropriately. The method was established basically for the quantitative Analysis of V in SiC by SIMS.