| As high performance polymer materials with exceptional thermal stability, mechanical and electrical properties, polyimides (PIs) have been widely used in many fields such as aerospace, electrical and microelectronics industries. Photosensitive polyimides (PSPIs) have recently obtained much attention and played very important roles in the field of semiconductor manufacturing as protection and insulation layer because of much simplified and safer processing steps required for getting a desired pattern.In this paper,several new photosensitive PIs were synthesized.First,polyimides PI-OH containing hydroxyl group were synthesized by condensation of 4,6-diaminoresocinol hydrochloric (DAR), 4, 4'-oxydianiline (ODA) and 4,4-oxydiphthalic anhydride (ODPA).The positive photoresist consisting of PI-OH and 20 wt% 1,2-naphthoqiunonediazide-5-sulfonic acid p-cresol ester (PC-5) shows a sensitivity (D0) of 225 mJ/cm~2 and a resolution of about 3μm with development in 1% tetramethylammonium hydroxide (TMAH) aqueous solution. PI-OH can be further acrylated to introduce the methylacrylate groups into polyimide chain to obtain the negative PSPI PI-A, which shows good photolithographic properties, with a resolution about 8μm and a sensitivity (D0.5) of 250 mJ/cm~2.Then,I synthesized another A novel negative photoinitiator-free photosensitive polyimide (APS–PI) was synthesized through introducing the photosensitive 4,4-bis[(4-amino)thiophenyl] benzophenone (BATPB) into backbone chain and methyl acrylate group into side-chain of the polyimide respectively. Photosensitive properties study revealed its good photolithographic properties, with a resolution about 5μm and a sensitivity of 150 mJ/cm~2Finally,I mixed PI-A and P-BTDA-MMDA together to form a new negative...
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