Several Attempts On Si-based And ZnO Luminescent Materials

Si-based and ZnO-based luminescence material attracted many researchers'attention. They have high potential on the light-emission devices.This paper presents several attempts on Si-based and ZnO-basedluminescence materials: Si-Ti passivated porous silicon, preparation ofamorphous SiAl alloy by magnetron sputtering, and preparation of ZnOnanoparticles by oxidizing ZnAl and ZnAlO films.PS was passivated by sputtering titanium film. In order to avoid formationof Ti clusters, reducing sputtering power, increasing pressure and reducingsputtering time, such attempts were adopted during sputtering. Ti atoms bondedwith Si dangling bonds and formed Si-Ti bonds. And UV photon induced Si-Tiformtion during UV irradiating. After irradiated by ultraviolet light, the final PLintensity of passivated sample was two times higher than that of non-passivatedone. The formation of Si-Ti bond was demonstrated to be responsible for theimprovement of PL properties.Amorphous SiAl alloys film was prepared by a series of attempts. Itprovided the necessary condition for preparation Si quantum dots by oxidizingalloy films. Reducing sputtering power, increasing pressure, increasing thedistance between target and substrate, using reverse bias voltage and increasingSi content, above attempts break S-K growth mechanism of nano-films duringsputtering, and then amorphous SiAl alloys film was successfully prepared.ZnAl and ZnAlO films were prepared by sputtering. By thermal oxidizingZnAlO and ZnAl films, the structure of ZnO nanoparticles embedded inamorphous Al2O3 matrix was prepared. ZnO particles give strong excitonemission, and the visible light emission was quenched by the passivation ofAl2O3 matrix...