Research On The Preparation And Properties Of Silicon Quantum Dots Thin Films Embedded In The Silicon Carbide Matrix

Solar energy is a renewable energy source and its resources are extremely rich.Through the absorption of solar energy,solar cells can generate electricity.Thin films containing silicon quantum dots have important application prospects in the field of solar cells.In this paper,silicon quantum dots thin films embedded in the silicon carbide matrix as the object of study,the main work are about the research of the preparation and properties of thin films.In this paper,silicon quantum dots thin films embedded in the silicon carbide matrix are grown by magnetron co-sputtering method and rapid thermal annealing.The properties of the films was studied at different substrate temperatures.The results show that the number,size and crystallization rate of silicon quantum dots increase first and then decrease with the increase of substrate temperature.However,the optical bandgap of the film decreases first and then increases with the increase of substrate temperature.The optimum substrate temperature is 300?.The properties of silicon quantum dots thin films were studied under different sputtering power and annealing temperature.The results show that the sputtering power and annealing temperature have influence on the number of silicon quantum dots,the size of silicon quantum dots,the crystallization rate of silicon quantum dots,the optical band gap and photoluminescence peak.When the sputtering power is 100 w,the film has the best quality.The optimum annealing temperature is 1100?.The silicon-rich silicon carbide thin films were prepared by magnetron co-sputtering method,and the silicon quantum dots were grown by microwave annealing and rapid thermal annealing.The properties of the films were studied by two kinds of annealing methods.From the experimental results,it can be seen that microwave annealing can reduce the formation temperature of silicon quantum dots by 200°C.Under the same temperature conditions,microwave annealing grows more silicon quantum dots;the films also have higher crystallization rate;peak intensity isalso stronger.The number of the silicon quantum dots is the most and the silicon quantum dots size is the biggest(5.26nm)and the crystallization rate is the highest(74.25%)and the photoluminescence peak is the strongest when microwave annealing reaches 1000?.The results show that the high-quality silicon quantum dots can be precipitated at 1000?.