| In the electronics industry, because of its small size, high capacity, adapting to the surface mounting technology and electronic circuit miniaturization requirements, tantalum capacitors are widely used in mobile communications, computer, aerospace and other industries. The increasing demand for tantalum capacitor products causes the lack of tantalum resources. To compensate for the lack of tantalum resources, the thesis aims to development a kind of niobium electrolytic capacitors of adequate resource and better cost-effective advantages to replace tantalum electrolytic capacitors.Niobium electrolyte capacitor technology was developed based on the tantalum electrolyte capacitor technology. This paper gives a detailed description of formation and manganizing which are the most important processes in production of niobium capacitor.Technology for automatic controlling oxide film as dielectric during formation process was developed based on study works for many years according to technical requirements of tantalum capacitor. The operation mechanism for automatic controlling technology of oxide film was analyzed and control mode was established theoretically. The optimized technology for formation and manganizing process as key process for production of niobium capacitor was finally developed through complex experiments on the quality and growth efficiency of Nb2O5 oxide film during formation and on new techniques for manganizing process and complete technical parameters were recognized which play an important role in actual production. It is proved that accepted products were made through application of techniques as mentioned above.The technical achievement in this paper has been used in actual production and yield good application results which not only fill up the technical gap of niobium capacitor in China and provide theoretical and practice criterion for adjusting process parameters, but also the performance and productivity of niobium capacitor are greatly improved. |
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