Research Of Electrodeposition Gallium Arsenide Thin Film Material

As typical second generation semiconductor material, gallium arsenide (GaAs) had been applied in many kinds of high speed or photoelectric devices, because of its better semiconductor property compared with silicon (Si). However, there were many defects in traditional GaAs epitaxy process such as complicated equipment, vast power consume, long process period, pollution of the environment, limited the wide-ranging application of GaAs thin film. It had been achieved that overcome the defects by using electrodeposited GaAs, favor to prepare GaAs thin film solar cell with high ratio between efficiency and cost.As a film forming process, electrodepositing method was liven and had centuries-old history. But it is rare that research of electrodeposited GaAs film. The quality and thickness of the deposited film was to be improved yet. It were important that researching the process of electrodeposition GaAs thin film, analyzing the influence factors of the process, improving the quality of the deposited film, measuring the physical and chemical properties and making the foundation for the application of the GaAs film.Based on the theory of electrodeposition alloy, orthogonal experiment was done when one deposition parameter was variable and others fixed. These parameters were current density, the concentration and component of the electrolyte, electrode material. The patterns of the deposited films were observed by SEM, the ingredient was analyzed by energy spectrometer and the diffraction spectrum was recorded XRD. The optimum technological conditions of the two cases ,with and without EDTA in electrolyte,were obtained by means of experiment and test analysis. Such properties of the GaAs film obtained on the optimum technological conditions as constitution, appearance, conduction type, I-V characteristic were studied also. It was systematicness and practicalness study on the electrodeposition GaAs film.