| Social production and life can not be separated from energy,and the rapid development of society also promotes the rapid demand for energy.However,with the depletion of fossil energy and environmental pollution,it has brought a series of energy challenges and environmental problems to human society.Therefore,people began to pay attention to and develop renewable clean energy.Among many clean energy,solar energy is favored by more and more researchers because of its infinite reserves and convenient utilization.Among them,solar cells,as a device that directly converts light energy into electric energy,have received more and more development and research in the society.How to improve and improve the light absorption of solar cells,and then improve the photoelectric conversion efficiency of solar cells,has become an important research topic.At present,silicon-based solar cells occupy the main market share due to their long development history and mature manufacturing technology.However,due to its high production cost,low radiation resistance and thermal stability,it can not meet the growing needs of social development and production.Therefore,looking for stable solar cell materials with high photoelectric conversion efficiency has become a problem to be solved.In recent years,GaAs solar cells have attracted more and more attention and research because of their higher spectral response and thermal radiation stability than silicon-based solar cells.However,due to its high production cost and arsenic toxicity,it is difficult to popularize in production and life.In order to reduce production cost and pollution,making GaAs solar cells into thin-film solar cells to reduce the thickness of GaAs film is one of the main methods.However,with the decrease of the thickness of GaAs solar cells,how to improve the light absorption of thin-film GaAs solar cells in order to further improve the photoelectric conversion efficiency of GaAs solar cells has become a major research topic.At present,the introduction of microstructure into solar cells is one of the main methods to improve the light absorption of solar cells.It is mainly based on the light trapping mechanism of microstructure to repeatedly reflect,refract and scatter the incident light into solar cells to achieve multiple absorption and utilization of solar light,so as to improve the light absorption performance of solar cells.Based on the light trapping characteristics of microstructures,the simulation design and theoretical calculation are carried out through optical simulation software FDTD and electrical simulation software device,and the effects of three microstructures on the absorption and photoelectric conversion efficiency of thin-film GaAs solar cells are explored.The photoelectric characteristics of GaAs solar cells are discussed and analyzed.The main contents of this paper are as follows:（1）Based on the graded index gradient effect of pyramid,the effect of trapezoidal pyramid structure on the photoelectric performance of thin film GaAs solar cells was designed and studied.In order to study the effect of trapezoidal pyramid structure on the light absorption of thin-film GaAs solar cells,we used FDTD optical simulation software to simulate the thinfilm GaAs solar cells with and without trapezoidal pyramid.The simulation results show that the trapezoidal pyramid structure improves the light absorption of thin-film GaAs solar cells,Thus,the photoelectric conversion efficiency of thin-film GaAs solar cells is improved.Under the condition of optimal geometric parameters of trapezoidal pyramid,the efficiency reaches24.34%.Compared with GaAs solar cells without trapezoidal pyramid structure,the efficiency is increased by 29.60%.In addition,the effects of geometric parameters such as the height of the trapezoidal pyramid and the ratio of the upper and lower side length on the photoelectric properties of thin-film GaAs solar cells are also compared and analyzed.（2）In order to further improve the photoelectric conversion efficiency of gallium arsenide solar cells and reduce the use of gallium arsenide materials,we designed and studied a thinfilm gallium arsenide solar cell based on the cross groove structure based on the principle of transverse critical coupling resonance and reducing the carrier transmission distance to reduce carrier recombination,The simulation results show that the GaAs solar cell with the cross groove structure has better absorption and higher photoelectric conversion efficiency than the planar GaAs solar cell.Under the condition of optimal geometric parameters of the cross groove structure,the maximum photoelectric conversion efficiency of the solar cell is 25.28%,which is 60.40% higher than that of the GaAs Solar cell without the cross groove structure.In addition,the effects of the geometric parameters such as the depth,width and length of the cross groove structure on the performance of GaAs solar cells are also compared.（3）Considering the efficiency limit of single junction GaAs solar cells,in order to further improve the carrier transmission efficiency,we studied and designed a hybrid solar cell based on the combination of gallium arsenide and PEDOT: PSS organic compounds.The simulation results show that the light absorption of disk PEDOT: PSS / GaAs hybrid solar cells in the wavelength range of 300 to 1500 nm reaches more than 80%.Under the condition of optimal geometric parameters of nano disk structure,the photoelectric conversion efficiency reaches27.84%.Compared with PEDOT: PSS / GaAs hybrid solar cells without nano disk structure,the efficiency is improved by 26.08%.In addition,the geometric parameters such as the radius,height and active layer thickness of the disk are compared and analyzed to study their effects on the performance of GaAs solar cells. |
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