| ZnO is a wide band gap semiconductor material inⅡ—Ⅵfamily,which belongs to hexagonal crystal.The band gap and the exciton bound energy of ZnO are 3.37eV and 60meV,respectively ZnO crystal has symmetrically electrical Properties and flexibility on the vertical plane of c—axis,while the polycrystalline film with preferential c—axis orientation has the same Piezoelectric and photoelectrical properties as single-crystal film.Those outstanding physical property and even appearance of surface make ZnO film be widely applied to integrated system.Otherwise,ZnO films should have higher resistivity as piezoelectric films,and higher transmission rate or refractive index when Zn0 films are applied on integrationo optics.For further developing the applications on photoelectric diode,ultraviolet detectors,surface acoustic wave and piezo-sensitive resistance device,people often raise the property of ZnO film by doping.Scientists found that the doping of Mg2+in Li:ZnO not only increases the resistance of the ZnO film,but also raises its relative density.In this paper,on the base of understanding the crystalline structure,Piezoelectric property,photoelectric property of ZnO film,the applied Foreground on extension growth cushion amortizable layer,integration optics and each preparation technology of ZnO films.The ZnO thin films are prepared on Si(100)substrates by a sol-gel technology, which are characterized by X-ray diffraction,SEM and PL spectrum.The results indicate that the thin films are c-orientation,highly visible transmittance and homogeneous and dense surface.The characteristics of this technique are simple,nontoxic,practical.The XRD shows that the film got by the above method is ZnO crystal.The crystalline dimension is 15-60 nm and the average is 38nm.The transmittance of ZnO thin films＞85%in 300-800nm visible region.The optical properties of the films were characterized with photoluminescence(PL).Strong UV emission located at 381 nm is observed when excited with 325 nm light.
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