Large-Scale Crystal Growth System (Equipment) Key Technology Research

This subject is based on the key technique for T70 crystal growth equipment.As the crystal diameter and charge become larger and larger,it is necessary and urgent to research and develop the temperature control system with advanced and accurate and stable technique,to improve the crystal quality and national crystal growth equipment's automatic control degree greatly.FEM(finite element method)is the most important computation method in the 20th century, which applied to the field of semiconductor.Because of the large stuff of polycry-stallin, complex structure of furnace and expensive cost,computer simulation is a best way to improve system stability,shorten cycles growth period,reduce production cast.In this paper,the thermal field in the single crystal furnace was systematically researched. Thermoelectricity-coupled field of graphite heater was simulated.The current and voltage was defined in melting polycrystalline silicon,this will help to reduce production cast.The thermal field was completely simulated at any of various stages in crystal growth.,and the thermal distribution was calculated,which decided rationality of the thermal field.Making use of the theory of Vc/G(Vc the velocity of CZSi,G temperature gradient)that Dornberger put forward, the critical issues was discussed,and the position of OISF-ring was forecasted;Argon flow was visualized by the simulation of argon gas flow field in the furnace adopting new type of heat screen.The influence of argon flow on C,O contents in monocrystalline silicon,was discussed. At the same time,Pass face to face mention pull revolution organization carrying out kinetic methods of analysis,the characteristics of motion and live load having ascertained every organization middle component change characteristic property.