Study Of The Preparation And The Structures Of Si:H Films Deposited By RF Magnetron Sputtering

Environment pollution and energy source shortage are becoming the most important problems for the current society, and the exploitation of clear and renewable energy resources becomes the urgent problem for people. Solar cell, as a kind of semiconductor, can convert solar energy into electricity. Silicon based solar cells has been industrialization. For reducing cost and increasing transfer efficiency, Silicon based solar is going to be films, and Si:H films has the important role in thin films solar cell materials.Si:H films was prepared on middle purity quotient single crystal silicon by RF magnetron sputtering. The films were characterized by Raman spectrum, XRD, scanning electronic microscope and interference microscope. The influence of sputtering parameter for Si:H films deposition rate and structure had been researched, and then Si:H films solar cell was prepared.The result shows that as sputtering power increase, the silicon films deposition rate increase. There is a linear relation between them, it can be describe as v=1.47×10-4W when the power is between 70W-450W; as hydrogen partial pressure ratio increase, the silicon films deposition rate decreased, when the hydrogen partial pressure ratio become 0% to 75%, the silicon films deposition rate decrease from 0.096μm/min to 0.028μm/min; as air pressure increased, the silicon films deposition rate first increase and then decrease, when the air pressure is 2.8pa, the deposition rate is at the most to 0.0584μm/min.The result showed that the Si:H films were composed of compact particles. A kind of granular substructure at the nanometer grain appeared when H2 was doped. The results of Raman spectra shown that the Si:H films were amorphous; its mean grain sizes increased with sputtering power increasing, it reached the most at 104nm When the power is 400W. When the sputtering power was maintained at the same value, with the increase of hydrogen partial pressure, the mean grain sizes of Si:H films increased at first and then decreased, and reached to the largest at the value of 50% for the hydrogen partial pressure. The results of Raman spectra and XRD shown that the Si:H films were amorphous when it was prepared on glass substrate; Si:H films mean grain sizes increased with the substrate temperature increased at low sputtering power(125W),the evenness of Si:H films become bad when the substrate temperature increased at high sputtering power(400W),the crystalline grain become thick at the part.The Si:H films solar cell with PIN structure was prepared on middle purity quotient single crystal silicon, The open-circuit voltage was 125mV and 27mV on standard test situation, it indicated that the photovoltaic effect has militated, the transfer efficiency has to be 0.0054% and 0.0096%.