The Research On SIC Crystal Growth System On King Technology

With the development of microelectronics technology, the traditional semiconductor materials based on Si and GaAs devices because of their structure and characteristics of high temperature, high frequency, optical, etc. are increasingly shown its shortcomings and limitations. SiC materials, which with its unique large band gap, high critical breakdown field strength, high electron mobility, high thermal conductivity and other properties, a high-temperature, high-frequency, high-power, anti-radiation, short wavelength light-emitting and optoelectronic integrated device is an ideal material, in the microelectronics, optoelectronics and other fields has played a unique role as the world's new materials, microelectronics and optoelectronics research hot spots. However, SIC preparation difficult and costly, the market has not yet mature crystal growth technology and equipment is generally used for both tests.The issue raised by Lely based on 1955 law and in 1978 the former Soviet Union Tairov and Tsvetkov, and others made improvements Lely law as a theoretical basis for the design by drawing on the past, monocrystalline silicon and sapphire crystal growth equipment, years of experience to 80 silicon furnaces body of an experimental prototype designed to transform to meet the SIC crystal growth of the harsh environmental conditions required for the growth of equipment.Thermal field part and the temperature-controlled part of the core of the entire device. In the thermal field in the design process, mainly through finite element analysis software to APDL language file for the script, through the parametric modeling fast, fast to build and modify models for analysis and comparison of the latter part of the work of saving a lot of manpower and time. On the thermal system design and thermal simulation to optimize the field distribution of the issue to obtain the following main results:1. Through the growth of silicon carbide devices, graphite crucible of radial heat transfer model for the system analyzed and discussed the establishment of a growth system thermal analysis of theoretical models put forward the theoretical basis for insulation design to solve the crucible components of thermal systems design problems.2. Using finite element analysis of the coil turns, current intensity, current frequency of the Joule heat production rate of a detailed analysis of the impact of the discussion; analysis of thermal radiation using different strategies for different crucible shapes, crucible bottom and the the location of the coil relative to the thermal field distribution in the numerical analysis to solve the induction heating silicon carbide crystal growth system design of thermal field a major problem.In the system as a whole design process, through the machinery, vacuum sealing, electrical control of a key part of the optimal design to solve the vacuum chamber, high temperature and high vacuum sealing, water cycle cooling crucible furnace temperature measurement and control, and multi-system coordination and stability control, etc. technical difficulties, through debugging and crystal sample preparation, to achieve a more satisfactory working conditions to meet the requirements of crystal growth of the SIC.