The Preparation Of RE Doped GaN Powder By Sol-Gel Method And The Study Of Optical Properties

Comparing with Ge, Si, GaAs and GaP, GaN which has excellent performance has become the most valued III-V clan compound semiconductor materials, it has wide application in the area of microelectronics, optical-electronics and communications. The spectrum of rare earth doped semiconductors extend from ultraviolet light, visible light until to near infrared light, the wide band gap GaN materials are very beneficial to luminescence of rare earth ions doping, and the devices of rare earth doping GaN have many advantages such as high brightness, long life, good monochrome and so on[1-8] So the primary goal of this paper is the preparation of the eigen GaN and doped GaN with Pr, Ce, La and other rare earth, and to investigate the luminescence property through the comparison of experiment and theoretical results.On the basis of introduction of GaN and rare earth, this paper analyzes the advantages and disadvantages of preparation technology and the performance factors (impurities and defects). We choose Ga2O3 for gallium source, rare earth oxides for impurities source, citric acid for complexing agent, and then prepare eigen and doping GaN powder by Sol-Gel which is low cost, easy operating and uniform doping. Describing the crystal structure and optical properties of powder by X-ray, FITR and PL spectrum, analyzing the influence of craft to the quality of powder and the influence of doping to the band structure and optical properties. While we use the MS software which based on the theoretically density functional theory of primary principle, calculate the relationship of electronic structure and optical properties of GaN nano crystal, and the optical parameters after doping.The comparison of experiment and theoretical results show that when the PH value is 7, temperature is 950℃, the crystallinity of GaN powder is the best, the luminous intensity fall of doping powder with the rise of doping concentration and temperature; The theoretical calculation results show that the eigen and doping powder have the same optical properties compared with experimental results. This article provides theoretical and experimental basis for the design and application of GaN photoelectric material through the experiment and theoretical calculation.