| Nanocrystalline zinc oxide (ZnO) is a direct-gap semiconductor material with a wurtzite structure. its lattice constant is a=0.3249nm,c=0.52056nm separately, and the ratio of a and c is 1.602. the power of ZnO is odourless, tasteless and has no biotoxicity. It will show pale yellow after heating. The density of ZnO is 5.676g/cm, and its melting point is 1975℃. ZnO is only slightly soluble in water and will generate zinc salts. The band-gap of ZnO is 3.37eV under room temperature. Its exciton binding energy and far outweigh that of ZnSe and GaN, therefore it has the vantage of radiating blue light and black light.ZnO is a versatile semiconductor material, ZnO films are widely used in UV detectors, solar cells, gas sensors, transparent conductive electrodes, varistors, and so on. In recent years, more and more people pay attention in the research of ZnO semiconductor materials.In this thesis, two dimensional growth pace is make up using the method of electrodeposits. Zn films are prepared with different growth potential and optimum film is get after comparing. ZnO films are getting after annealing,meanwhile, XRD structure of ZnO thin films were analyzed, from with we conclude that ZnO is high C-axis oriented.the morphologies are characterized using FESEM. In order to investigate the mechanisms of the formation of different films, the establishment process of the films, namely the formation and the growth of the core is analyzed fistly. Point effect, skin effect of the electron and the interaction force are the dominate reasons for the formation of liner films and branched films, and the force of the diffusing phenomenon and the sine wave which can bifurcate the films. The other morphologies are also analyzed in this thesis.
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