| Overyears, with the concept of sustainable development and environmental protection have deeply rooted in the people, and the depletion of traditional fossil energy sources, the development of new energy and renewable clean energy will become one of very important technology in the 21st century. The main research task of solar energy is how to replace the traditional energy. However, in view of the limited reduction space upon cost of solar cell of silicon wafer, it is hard to compete with conventional enegry. It brings that thin-film solar cell may be the hot issue instead of silicon solar cell. Among all the thin-films, amorphous silicon (a-si), which is lower cost and easily operated, now is the hotspot of R&D. What's more, a-si can be deposited on different kinds of substrates, such as glass, stainless steel or plastic. But a-si also has its deathful shortcoming of Staebler-Wronski effect (SWE), which cause poor lifetime of solar cell. As a result, poly-silicon(p-si) thin film solar cells with high effieieney, stability and low-cost would replace the a-si thin film solar cells as a new generation of non-pollution civil solar cells.This paper focuses on the fabrication of poly-silicon thin film. First of all, a-si was deposited on glass through Plasma-Enhanced Chemical Vapor Deposition (PECVD). And then crystallization process by laser annealing method was studied. X-ray diffraction and Raman scatter spectroscopy was used to character the crystallization result. Atomic Force Microscope was used to observe the surface appearance of a-si film. At the same time, in order to study the temperature field effect in the crystallization process and the stress caused by temperature, we will use ANSYS 10.0 as the tool of numerical analysis, which is a kind of finite element analvsis.
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