Study Of A-SiC: H Thin Film Doping As Window Layer For The Solar Cell

Solar cell is the next most clean, safe energy, which represents the new direction of the new energy. All the world are rushing to research various types of solar cells, and want to control the new energy technologies.The amorphous silicon thin film batteries studied in this article, as a kind of silicon solar cells, has got lots of attentions from birthday to now. We study the preparation technology of amorphous silicon thin-film battery as the window layer in the article, use different doping ratio researching the doped films, including hydrogen dilution, carbon and boron doping. We use different doping ratio to study film properties in these three series, from deposition rate, electrical conductivity, optical band gap, and the surface topography. Through these methods, attempt to validate the theory, and study the interreaction of the elements on the film doping process, prepare for the next stage.By controlling the doping concentration of different elements, we learned that hydrogen plays an important role in the SiC film quality. When the hydrogen dilution rate (HDR) is 6.25, the film surface roughness is reduced 3/4, indicating that the hydrogen flow rate proportion of the reaction gas affects evolution of the film from amorphous to microcrystalline directly. The carbon and boron elements is very prominent in change of band gap and conductivity aspects of the film, when the carbon doping density (CDD) is 2, the thin film band gap reached 2.15eV, and when the boron doping density(BDD) is 75%, film conductivity reached 2.5×10-6, at the same time, we know these elements does not play alone.