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The Study Of Double-layer Passivated And A Kind Of Efficient Solar Cell

Posted on:2012-01-03Degree:MasterType:Thesis
Country:ChinaCandidate:J H LiuFull Text:PDF
GTID:2132330335950728Subject:Optical Engineering
Abstract/Summary:PDF Full Text Request
With the deterioration of the energy problem, the development and utilization of solar cell are becoming to be the mainstream of the world today.At present the monocrystalline and polycrystalline solar cell still occupy the major market,How to improve the efficiency of such solar cells are currently the main problem that we must be confronted.Connected with the production line,the double-layer(SiNx/SiO2) passivation,high light trapping anti-reflective layer are studied in this paper,the study of Diffusion process and the Minority carrier lifetime are also revealed in this paper.SiO2 films growed on high temperature oxidation have a good passivation effection,Si-O bond are formed in the surface of the crystalline silicon,which can effectively reduce the surface defects,reduce the surface recombination velocity and increase the Minority carrier lifetime.Thermal oxide SiO2 film is mainly dependent on the way which reduce the surface state to reduce the interface charge density,SiNx film is used in the normal process to get the main application of optical film,the process of SiNX film accompanied with H passivated process,in this process, H ion implantation play an important part ind passivation, On the other hand, the conventional PECVD process is easy to achieve good anti-reflection film,75nm optical films only needs 20min or so.Conventional thermal oxide film is relatively slow process,10-20nm optical films need very long time. So in this paper.a dense oxide layer is fristly be formed,and then a further high quality,high refractive optical films(SiNx)is covered on it. We can conclude that the influence of Electrical properties with the double-layer passivation process.Monocrystalline silicon have anisotropy,due to different crystal plane family and the bond energy,Pyramid structure can be formed in Alkaline solution.On the contrary,Polysilicon is not the case, corrosion pit-like structure can only be formed in the acid. Therefore the texture in polycrystalline are becoming to be a restrict,more and more attention are paid in this Field, Black silicon solar cell make it possible In this method, glow discharge plasma produced by selective etching the silicon. Surface, forming dense nano-structure,and thus play a good part in light trapping,the average reflectivity of polysilicon can reach 4%,thereby greatly enhancing the Cell Efficiency.In this paper,how to combined with the actual production line to enhance the efficiency of solar cells are studied.
Keywords/Search Tags:Double-layer flim, Antireflective film, Silicon nitride, H passivation, Surface recombination velocity, The minority carrier lifetime
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