Minority Carrier Lifetime Of Silicon Solar Cell Research And Measurement

It is a new technique that using I-V character to measure minority lifetime in solar cell base region for finished solar cells. The method is acquired by analyzing the relationship of carrier lifetime and short circuit current and open circuit voltage. Through measuring I-V character of solar cells, short circuit current and open circuit voltage and series resistant and shunt resistant could be gained, and then minority carrier lifetime and dark saturation current are calculated by the new method.Specially, the new method can be used to monitor the solar cells minority carrier lifetime with QSSpc during manufactured processing.That made minority carrier lifetime monitored in the whole manufactured processes pefectly.In our experiments, solar cells are manufactured according to stand industrial processes, and minority carrier lifetime is measured after each process to optimize diffusion conditions and oxidation conditions. The new method has been proved feasible by experimental contrast to measure base region minority carrier lifetime of solar cell. The new method could monitor manufacture processes perfectly.